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Proceedings Paper

Terahertz detection by field effect transistors security imaging
Author(s): W. Knap; F. Teppe; C. Consejo; B. Chenaud; J. Torres; P. Solignac; Z. R. Wasilewski; M. Zholudev; N. Dyakonova; D. Coquillat; P. Buzatu; A. El Fatimy; F. Schuster; H. Videlier; M. Sakowicz; B. Giffard; T. Skotnicki; F. Palma
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Paper Abstract

In this work we review the most important results concerning the physics and applications of FETs as Terahertz detectors. We present two experiments showing: i) Terahertz detection based on low cost 130 nm silicon technology Field Effect Transistors in the sub-THz range (0.2 THz up to 1.1 THz) and ii) first results on detection by FETs of emission from 3.1 THz Quantum Cascade Lasers.

Paper Details

Date Published: 26 May 2011
PDF: 8 pages
Proc. SPIE 8023, Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense, 802307 (26 May 2011); doi: 10.1117/12.883661
Show Author Affiliations
W. Knap, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (France)
F. Teppe, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (France)
C. Consejo, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (France)
B. Chenaud, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (France)
J. Torres, Institut d'Electroniques du Sud, CNRS, Univ. Montpellier II (France)
P. Solignac, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (France)
Z. R. Wasilewski, National Research Council Canada (Canada)
M. Zholudev, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (France)
Institute for Physics of Microstructures (Russian Federation)
N. Dyakonova, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (France)
D. Coquillat, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (France)
P. Buzatu, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (France)
A. El Fatimy, Cardiff Univ. (United Kingdom)
F. Schuster, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (France)
CEA-LETI, MINATEC (France)
H. Videlier, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (France)
M. Sakowicz, Lab. Charles Coulomb, CNRS, Univ. Montpellier II (Canada)
B. Giffard, CEA-LETI, MINATEC (France)
T. Skotnicki, STMicroelectronics (France)
F. Palma, NTT New Tera Technology s.r.l. (Italy)


Published in SPIE Proceedings Vol. 8023:
Terahertz Physics, Devices, and Systems V: Advance Applications in Industry and Defense
Mehdi Anwar; Nibir K. Dhar; Thomas W. Crowe, Editor(s)

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