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Proceedings Paper

Effects of carrier concentration and phonon energy on carrier lifetime in type-2 SLS and properties of InAs1-XSbX alloys
Author(s): G. Belenky; G. Kipshidze; D. Donetsky; S. P. Svensson; W. L. Sarney; H. Hier; L. Shterengas; D. Wang; Y. Lin
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Paper Abstract

GaInSb and AlGaInSb compositionally graded buffer layers grown on GaSb by MBE were used to develop unrelaxed InAs1-XSbXepilayers with lattice constants up to 2.1 % larger than that of GaSb. The InAsSb buffer layer was used to grow InAs0.12Sb0.88 layer on InSb. The structural and optical characterization of 1-μm thick InAs1-xSbx layers was performed together with measurements of the carrier lifetime.

Paper Details

Date Published: 21 May 2011
PDF: 10 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80120W (21 May 2011); doi: 10.1117/12.883625
Show Author Affiliations
G. Belenky, Stony Brook Univ. (United States)
G. Kipshidze, Stony Brook Univ. (United States)
D. Donetsky, Stony Brook Univ. (United States)
S. P. Svensson, U.S. Army Research Lab. (United States)
W. L. Sarney, U.S. Army Research Lab. (United States)
H. Hier, U.S. Army Research Lab. (United States)
L. Shterengas, Stony Brook Univ. (United States)
D. Wang, Stony Brook Univ. (United States)
Y. Lin, Stony Brook Univ. (United States)


Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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