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Proceedings Paper

W-band direct detection radiometers using metamorphic HEMT technology
Author(s): Ingmar Kallfass; Axel Huelsmann; Axel Tessmann; Arnulf Leuther; E. Weissbrodt; M. Schlechtweg; O. Ambacher
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Paper Abstract

At this paper we report on a W-band direct detection radiometer cascading a single-pole four-throw switch with integrated 50 Ω load as a reference noise source, a 3 x 20 dB low-noise amplifier chain, and a broadband Schottky-diode detector. All components are designed and fabricated in 100 nm metamorphic high electron mobility transistor (mHEMT) technology and use waveguide packaging. By using 2 channels of the switch module the Dicke-principle is implemented to drastically reduce the inherent amplifier noise. The multi-throw switch insertion loss is less than 3.5 dB on the chip level and 4.4 dB on the module level. The entire W-band direct detection radiometer chain is also integrated on a single chip and packaged into a waveguide module, which was successfully tested and is now ready for system integration.

Paper Details

Date Published: 26 May 2011
PDF: 5 pages
Proc. SPIE 8022, Passive Millimeter-Wave Imaging Technology XIV, 80220O (26 May 2011); doi: 10.1117/12.883473
Show Author Affiliations
Ingmar Kallfass, Fraunhofer Institute for Applied Solid-State Physics (Germany)
Karlsruhe Institute of Technology (Germany)
Axel Huelsmann, Fraunhofer Institute for Applied Solid-State Physics (Germany)
Axel Tessmann, Fraunhofer Institute for Applied Solid-State Physics (Germany)
Arnulf Leuther, Fraunhofer Institute for Applied Solid-State Physics (Germany)
E. Weissbrodt, Fraunhofer Institute for Applied Solid-State Physics (Germany)
M. Schlechtweg, Fraunhofer Institute for Applied Solid-State Physics (Germany)
O. Ambacher, Fraunhofer Institute for Applied Solid-State Physics (Germany)
Univ. of Freiburg (Germany)


Published in SPIE Proceedings Vol. 8022:
Passive Millimeter-Wave Imaging Technology XIV
David A. Wikner; Arttu R. Luukanen, Editor(s)

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