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Proceedings Paper

Silicon and nitride FETs for THz sensing
Author(s): M. Shur
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Paper Abstract

Traditional THz electronics is using nonlinear properties of Schottky diodes for THz detectors and mixers and Gunn diodes driving frequency multiplier Schottky diode chains. Recently, ultra-short channel silicon CMOS and nitridebased transistors have demonstrated THz performance. New approaches use excitations of electron density in FET channels - called plasma waves - to generate and detect THz radiation, and extremely high sheet electron density in short channel AlN/GaN based HEMTs makes them especially suitable for applications in THz plasmonic devices.

Paper Details

Date Published: 13 May 2011
PDF: 9 pages
Proc. SPIE 8031, Micro- and Nanotechnology Sensors, Systems, and Applications III, 80310J (13 May 2011); doi: 10.1117/12.883309
Show Author Affiliations
M. Shur, Rensselaer Polytechnic Institute (United States)


Published in SPIE Proceedings Vol. 8031:
Micro- and Nanotechnology Sensors, Systems, and Applications III
Thomas George; M. Saif Islam; Achyut K. Dutta, Editor(s)

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