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Proceedings Paper

MWIR InAsSb XB[sub]n[/sub]n detector (bariode) arrays operating at 150K
Author(s): Philip Klipstein; Olga Klin; Steve Grossman; Noam Snapi; Inna Lukomsky; Maya Brumer; Michael Yassen; Daniel Aronov; Eyal Berkowitz; Alexander Glozman; Tal Fishman; Osnat Magen; Itay Shtrichman; Eliezer Weiss
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Paper Abstract

The XBnn high operating temperature (HOT) detector project at SCD is aimed at developing a HOT (~150K) mid-wave infrared (MWIR) detector array, based on InAsSb/AlSbAs barrier detector or "bariode" device elements. The essential principle of the XBnn bariode architecture is to suppress the Generation-Recombination contribution to the dark current by ensuring that the depletion region of the device is contained inside a large bandgap n-type barrier layer (BL) and excluded from the narrow bandgap n-type active layer (AL). The band profile of the XBnn device leads to effective blocking of electron transport across the BL while maintaining a free path for the holes, thus assuring a high internal quantum efficiency (QE). Our devices exhibit a very large minority carrier lifetime (~700 ns), leading to a very low dark current of <10-6 A cm-2 at 150K, which is essentially diffusion limited. We compare bariode devices with both a p-type GaSb contact layer (CL) and an n-type InAsSb CL (termed CpBnn and nBnn, respectively). Apart from a ~0.3V shift in the operating bias, the optical and electrical properties of both architectures are virtually identical, demonstrating the generic nature of the XBnn barrier detector family. We have fabricated FPAs from nBnn bariode arrays bonded both to a 320×256, 30 μm pitch Read-Out Integrated Circuit (ROIC) and a 640×512, 15 μm pitch ROIC. For lattice matched FPAs the cut-off wavelength at >50% of maximum response is ~ 4.1 μm. We show an image registered at 150K with a 640×512/15 μm Pelican FPA, using f/3.2 optics. The operability at 150K is >99.5% and the measured NETD, limited only by shot and Read-Out noise, is 20 mK for a 22 ms integration time. At this f/number, the detector has a background limited performance (BLIP) up to ~165K.

Paper Details

Date Published: 20 May 2011
PDF: 9 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80122R (20 May 2011); doi: 10.1117/12.883238
Show Author Affiliations
Philip Klipstein, SCD Semiconductor Devices (Israel)
Olga Klin, SCD Semiconductor Devices (Israel)
Steve Grossman, SCD Semiconductor Devices (Israel)
Noam Snapi, SCD Semiconductor Devices (Israel)
Inna Lukomsky, SCD Semiconductor Devices (Israel)
Maya Brumer, SCD Semiconductor Devices (Israel)
Michael Yassen, SCD Semiconductor Devices (Israel)
Daniel Aronov, SCD Semiconductor Devices (Israel)
Eyal Berkowitz, SCD Semiconductor Devices (Israel)
Alexander Glozman, SCD Semiconductor Devices (Israel)
Tal Fishman, SCD Semiconductor Devices (Israel)
Osnat Magen, SCD Semiconductor Devices (Israel)
Itay Shtrichman, SCD Semiconductor Devices (Israel)
Eliezer Weiss, SCD Semiconductor Devices (Israel)

Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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