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Proceedings Paper

Tl-based wide gap semiconductor materials for x-ray and gamma ray detection
Author(s): Zhifu Liu; J. A. Peters; C. Zang; Nam Ki Cho; Bruce W. Wessels; Simon Johnsen; Sebastian Peter; John Androulakis; Mercouri G. Kanatzidis; Jung-Hwan Song; Hosub Jin; Arthur J. Freeman
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Paper Abstract

The optical and electronic properties of Tl-chalcogenide, wide gap semiconductors, TlGaSe2, Tl6I4Se, and Tl2Au4S3 for x-ray and γ ray detection were characterized. The semiconductor crystals are grown by the modified Bridgman method. The optical absorption and band gap energy of the materials were determined from UV-Vis-near IR transmission and reflection spectra. The mobility-lifetime products were measured. For Tl6I4Se the values were comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray radiations. Under 57Co radiation, Tl6I4Se has a well-resolved spectral response and peak FWHM comparable to those of Cd0.9Zn0.1Te.

Paper Details

Date Published: 3 June 2011
PDF: 9 pages
Proc. SPIE 8018, Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII, 80180H (3 June 2011); doi: 10.1117/12.883230
Show Author Affiliations
Zhifu Liu, Northwestern Univ. (United States)
J. A. Peters, Northwestern Univ. (United States)
C. Zang, Northwestern Univ. (United States)
Nam Ki Cho, Northwestern Univ. (United States)
Bruce W. Wessels, Northwestern Univ. (United States)
Simon Johnsen, Northwestern Univ. (United States)
Sebastian Peter, Northwestern Univ. (United States)
John Androulakis, Northwestern Univ. (United States)
Mercouri G. Kanatzidis, Northwestern Univ. (United States)
Jung-Hwan Song, Northwestern Univ. (United States)
Hosub Jin, Northwestern Univ. (United States)
Arthur J. Freeman, Northwestern Univ. (United States)

Published in SPIE Proceedings Vol. 8018:
Chemical, Biological, Radiological, Nuclear, and Explosives (CBRNE) Sensing XII
Augustus W. Fountain III; Patrick J. Gardner, Editor(s)

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