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Proceedings Paper

Designing materials for advanced microelectronic patterning applications using controlled polymerization RAFT technology
Author(s): Michael T. Sheehan; William B. Farnham; Charles R. Chambers; Hoang V. Tran; Hiroshi Okazaki; Yefim Brun; Matthew L. Romberger; James R. Sounik
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Paper Abstract

Reversible Addition Fragmentation Chain Transfer (RAFT) polymerization technology enables the production of polymers possessing low polydispersity (PD) in high yield for many applications. RAFT technology also enables control over polymer architecture. With synthetic control over these polymer characteristics, a variety of polymers can be designed and manufactured for use in advanced electronic applications. By matching the specific RAFT reagent and monomer combinations, we can accommodate monomer reactivity and optimize acrylate or methacrylate polymerizations (193 and 193i photoresist polymers) or optimize styrenic monomer systems (248 nm photoresist polymers) to yield polymers with PD as low as 1.05. For 193i lithography, we have used RAFT technology to produce block copolymers comprising of a random "resist" block with composition and size based on conventional dry photoresist materials and a "low surface energy" block The relative block lengths and compositions may be varied to tune solution migration behavior, surface energy, contact angles, and solubility in developer. Directed self assembly is proving to be an interesting and innovative method to make 2- and even 3-dimensional periodic, uniform patterns. Two keys to acceptable performance of directed self assembly from block copolymers are the uniformity and the purity of the materials will be discussed.

Paper Details

Date Published: 15 April 2011
PDF: 12 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720T (15 April 2011); doi: 10.1117/12.882960
Show Author Affiliations
Michael T. Sheehan, DuPont Electronic Polymers L.P. (United States)
William B. Farnham, E. I. duPont de Nemours & Co. (United States)
Charles R. Chambers, DuPont Electronic Polymers L.P. (United States)
Hoang V. Tran, E. I. duPont de Nemours & Co. (United States)
Hiroshi Okazaki, DuPont Electronic Polymers L.P. (United States)
Yefim Brun, E. I. duPont de Nemours & Co. (United States)
Matthew L. Romberger, DuPont Electronic Polymers L.P. (United States)
James R. Sounik, DuPont Electronic Polymers L.P. (United States)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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