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Proceedings Paper

Critical challenges for EUV resist materials
Author(s): Patrick P. Naulleau; Christopher N. Anderson; Lorie-Mae Baclea-an; Paul Denham; Simi George; Kenneth A. Goldberg; Gideon Jones; Brittany McClinton; Ryan Miyakawa; Seno Rekawa; Nate Smith
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Paper Abstract

Although Extreme ultraviolet lithography (EUVL) is now well into the commercialization phase, critical challenges remain in the development of EUV resist materials. The major issue for the 22-nm half-pitch node remains simultaneously meeting resolution, line-edge roughness (LER), and sensitivity requirements. Although several materials have met the resolution requirements, LER and sensitivity remain a challenge. As we move beyond the 22-nm node, however, even resolution remains a significant challenge. Chemically amplified resists have yet to demonstrate the required resolution at any speed or LER for 16-nm half pitch and below. Going to non-chemically amplified resists, however, 16-nm resolution has been achieved with a LER of 2 nm but a sensitivity of only 70 mJ/cm2.

Paper Details

Date Published: 15 April 2011
PDF: 10 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797202 (15 April 2011); doi: 10.1117/12.882955
Show Author Affiliations
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)
Christopher N. Anderson, Lawrence Berkeley National Lab. (United States)
Lorie-Mae Baclea-an, Lawrence Berkeley National Lab. (United States)
Paul Denham, Lawrence Berkeley National Lab. (United States)
Simi George, Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Gideon Jones, Lawrence Berkeley National Lab. (United States)
Brittany McClinton, Univ. of California, Berkeley (United States)
Ryan Miyakawa, Univ. of California, Berkeley (United States)
Seno Rekawa, Lawrence Berkeley National Lab. (United States)
Nate Smith, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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