Share Email Print

Proceedings Paper

IR CMOS: ultrafast laser-enhanced silicon detection
Author(s): M. U. Pralle; J. E. Carey; H. Homayoon; J. Sickler; X. Li; J. Jiang; D. Miller; C. Palsule; J. McKee
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

SiOnyx has developed a novel silicon processing technology for CMOS sensors that will extend spectral sensitivity into the near/shortwave infrared (NIR/SWIR) and enable a full performance digital night vision capability comparable to that of current image-intensifier based night vision goggles. The process is compatible with established CMOS manufacturing infrastructure and has the promise of much lower cost than competing approaches. The measured thin layer quantum efficiency is as much as 10x that of incumbent imaging sensors with spectral sensitivity from 400 to 1200 nm.

Paper Details

Date Published: 21 May 2011
PDF: 2 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 801222 (21 May 2011); doi: 10.1117/12.882867
Show Author Affiliations
M. U. Pralle, SiOnyx Inc. (United States)
J. E. Carey, SiOnyx Inc. (United States)
H. Homayoon, SiOnyx Inc. (United States)
J. Sickler, SiOnyx Inc. (United States)
X. Li, SiOnyx Inc. (United States)
J. Jiang, SiOnyx Inc. (United States)
D. Miller, SiOnyx Inc. (United States)
C. Palsule, SiOnyx Inc. (United States)
J. McKee, SiOnyx Inc. (United States)

Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

© SPIE. Terms of Use
Back to Top