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Proceedings Paper

Photoreflectance study of indium segregation in the InGaAs quantum well
Author(s): Lev P Avakyants; Pavel Yu. Bokov; Avatoly V. Chervyakov; Evgeny A. Glazyrin; Igor P. Kazakov
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Paper Abstract

The electron-hole states in the molecular beam epitaxy grown GaAs/In0.5Ga0.5As quantum well, placed into space charge region, have been studied by photoreflectance spectroscopy. The energies of electrons and holes have been calculated in the envelope function model including deformation-induced changes in the band structure of quantum well. It is shown that the best accordance between experimental and theoretical data is achieved in the case of band offset Q = ;Ec/;Ev = 0.62/0.38 at GaAs/In0.5Ga0.5As heterojunction. The most intense transition is observed in this case between 1 electron and 1 light hole energy. This fact is connected with the indium segregation in the GaAs/In0.5Ga0.5Asquantum well. In this case one could obtain the flat bands in the quantum well and realize the parity selection rules for the rectangular potential. The model of the nonsymmetrical rectangular potential is applied to describe the energies of electronic levels in the quantum well. The segregation parameters have been calculated from the segregation-induced shift of the energies of interband transitions in the GaAs/In0.5Ga0.5As quantum well.

Paper Details

Date Published: 18 January 2011
PDF: 6 pages
Proc. SPIE 7747, 16th International School on Quantum Electronics: Laser Physics and Applications, 77470M (18 January 2011); doi: 10.1117/12.882842
Show Author Affiliations
Lev P Avakyants, Lomonosov Moscow State Univ. (Russian Federation)
Pavel Yu. Bokov, Lomonosov Moscow State Univ. (Russian Federation)
Avatoly V. Chervyakov, Lomonosov Moscow State Univ. (Russian Federation)
Evgeny A. Glazyrin, P.N. Lebedev Physical Institute (Russian Federation)
Igor P. Kazakov, P.N. Lebedev Physical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 7747:
16th International School on Quantum Electronics: Laser Physics and Applications
Tanja Dreischuh; Dimitar Slavov, Editor(s)

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