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Proceedings Paper

High performance dual-band InAs/GaSb SLS detectors with nBn and pBp architectures
Author(s): E. Plis; N. Gautam; S. Myers; S. S. Krishna; E. P Smith; S. Johnson; S. Krishna
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Paper Abstract

We report on dual-band (mid-/long-wave infrared) InAs/GaSb strained layer superlattice detector with nBn and pBp architectures. Two band response was registered with 50% cut-off wavelengths of 5μm (both nBn and pBp detectors) and 9μm (nBn)/10μm (pBp). The maximum peak responsivity of MWIR absorber equal to 1.6 A/W (at λ = 5 μm and Vb = +1 V) and LWIR absorber equal to 1.2 A/W (at λ = 10 μm and Vb = -1 V) for nBn detector, with the corresponding values of D* were 1.2 x 1011 Jones and 1.2 x 1010Jones for MWIR and LWIR absorbers, respectively (77 K). The maximum values of quantum efficiency were estimated to 36% (MWIR) and 15% (LWIR) at Vb = +1V and Vb = -1V. For pBp detector, the responsivity equal to 1.6 A/W (at λ = 5 μm and Vb = +0.4 V) and 1.8 A/W (at λ = 9 μm and Vb = -0.7 V) for MWIR and LWIR absorbers was achieved with corresponding values of specific detectivity 5 x 1011 Jones and 2.6 x 1010Jones, respectively. The maximum values of quantum efficiency were estimated to 41% (MWIR) and 25% (LWIR) at Vb = +0.4V and Vb = -0.7V. Moreover, the diffusion-limited behavior of dark current at higher temperatures was observed for MWIR absorber for pBp detector. The overall performance of the dual-band InAs/GaSb SLS detectors with investigated designs showed comparable (nBn design) and superior (pBp design) performance to the QWIP detectors both in MWIR and LWIR bands and comparable performance to MCT detectors in MWIR band (nBn and pBp detector designs).

Paper Details

Date Published: 20 May 2011
PDF: 9 pages
Proc. SPIE 8012, Infrared Technology and Applications XXXVII, 80120X (20 May 2011); doi: 10.1117/12.882399
Show Author Affiliations
E. Plis, SK Infrared LLC (United States)
N. Gautam, The Univ. of New Mexico (United States)
S. Myers, The Univ. of New Mexico (United States)
S. S. Krishna, SK Infrared LLC (United States)
E. P Smith, Raytheon Vision Systems (United States)
S. Johnson, Raytheon Vision Systems (United States)
S. Krishna, SK Infrared LLC (United States)


Published in SPIE Proceedings Vol. 8012:
Infrared Technology and Applications XXXVII
Bjørn F. Andresen; Gabor F. Fulop; Paul R. Norton, Editor(s)

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