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Proceedings Paper

Resolution capacity of Hall microsensors in MOS structures
Author(s): George Căruntu; Cornel Panait; Irina Căruntu
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Paper Abstract

An essential parameter in the setting up of the performance of the measurement systems that uses Hall microsensors is the detection limit of such devices. The paper presents the results of research work regarding the analysis and optimization of magnetic microsensor structures realized in bipolar and MOS integrated circuits technology. On the basis of adequate models these have been established the noise main characteristics for double collector vertical magnetotransistor and for double-drain MOSFET magnetotransistors. By using the numerical simulation the values of the signal-to-noise ratio and the detection limits for the two analysed structured are compared and it is also emphasized the way in which choosing the geometry and the material features allow getting high-performance sensors.

Paper Details

Date Published: 4 December 2010
PDF: 6 pages
Proc. SPIE 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V, 78211Z (4 December 2010); doi: 10.1117/12.882371
Show Author Affiliations
George Căruntu, Maritime Univ. of Constantza (Romania)
Cornel Panait, Maritime Univ. of Constantza (Romania)
Irina Căruntu, Maritime Univ. of Constantza (Romania)


Published in SPIE Proceedings Vol. 7821:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V
Paul Schiopu; George Caruntu, Editor(s)

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