Share Email Print
cover

Proceedings Paper

Optical illumination optimization for patterned defect inspection
Author(s): Bryan M. Barnes; Richard Quinthanilha; Yeung-Joon Sohn; Hui Zhou; Richard M. Silver
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

Rapidly decreasing critical dimensions (CD) for semiconductor devices drive the study of improved methods for the detection of defects within patterned areas. As reduced CDs are being achieved through directional patterning, additional constraints and opportunities present themselves in defect metrology. This simulation and experimental study assesses potential improvements in patterned defect inspection that may be achieved by engineering the light incident to the sample within a high-magnification imaging platform. Simulation variables include the incident angle, polarization, and wavelength for defect types common to directional device layouts. Detectability is determined through differential images between no-defect- and defect-containing images. Alternative metrologies such as interference microscopy are also investigated through modeling. The measurement of a 20 nm defect is demonstrated experimentally using 193 nm light. The complex interplay of unidirectional patterning and highly directional defects is explored using structured off-axis illumination and polarization.

Paper Details

Date Published: 20 April 2011
PDF: 8 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79710D (20 April 2011); doi: 10.1117/12.882313
Show Author Affiliations
Bryan M. Barnes, National Institute of Standards and Technology (United States)
Richard Quinthanilha, National Institute of Standards and Technology (United States)
Yeung-Joon Sohn, National Institute of Standards and Technology (United States)
Hui Zhou, National Institute of Standards and Technology (United States)
Richard M. Silver, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)

© SPIE. Terms of Use
Back to Top