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Proceedings Paper

Al-doped ZnO nanocoatings obtained by sol-gel route
Author(s): S. Mihaiu; A. Toader; I. Atkinson; M. Anastasescu; M. Vasilescu; M. Zaharescu; R. Plugaru
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Paper Abstract

In recent years aluminum doped zinc oxide (AZO) film has attracted more attention due to many advantages including low cost, non-toxicity, and high stability to H2 plasma in comparison with indium tin oxide (ITO) film, the best known and used transparent conductive oxide (TCO) film. In this work, mono and multilayer Al-doped ZnO coatings have been obtained by dip coating sol-gel method on the glass and silicon supports. X-ray Diffraction, Atomic Force Microscopy (AFM) and Fluorescence Spectroscopy were used for the structural, morphological and optical characterization of the obtained coatings. The multilayer Al-doped ZnO coatings (after five layer depositions) on the silicon substrate present a polycrystalline wurtzite type structure with crystallite size of 20 nm. The AFM measurements have shown that no matter the support type, the Al-doped ZnO coatings present a similar morphology consisting in a smooth distribution of the circular grains leading also to similar values of the RMS roughness, around 2 nm. The photoluminescence properties of the Al-doped ZnO coatings depend on the number of depositions and type of substrate. Systematic study performed allows finding most suitable parameters for obtaining coatings with desired properties.

Paper Details

Date Published: 4 December 2010
PDF: 10 pages
Proc. SPIE 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V, 78211D (4 December 2010); doi: 10.1117/12.882301
Show Author Affiliations
S. Mihaiu, Ilie Murgulescu Institute of Physical Chemistry (Romania)
A. Toader, Ilie Murgulescu Institute of Physical Chemistry (Romania)
I. Atkinson, Ilie Murgulescu Institute of Physical Chemistry (Romania)
M. Anastasescu, Ilie Murgulescu Institute of Physical Chemistry (Romania)
M. Vasilescu, Ilie Murgulescu Institute of Physical Chemistry (Romania)
M. Zaharescu, Ilie Murgulescu Institute of Physical Chemistry (Romania)
R. Plugaru, IMT-Bucharest (Romania)


Published in SPIE Proceedings Vol. 7821:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V

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