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Proceedings Paper

Density of impurity states in coaxial GaAs/AlGaAs quantum well wires under non-resonant intense laser fields
Author(s): A. Radu
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Paper Abstract

Precise laser-dressing effects are considered for both the confinement potential of the coaxial cylindrical quantum well wires and the Coulomb potential of the impurities. The computation of the ground state subband energy eigenfunctions for different laser field parameters is based on the finite element method. Significant changes of the electron probability density under intense laser field are predicted. The binding energies of the shallow-donor impurities are variationally calculated within the effective-mass approximation. The study reveals that the laser field competes with the quantum confinement and breaks down the degeneracy of states for donors symmetrically positioned within the coaxial nanowires. A proper interpretation of the density of impurity states is considered to be essential for controlling the optoelectronic properties of doped semiconductor quantum well wires.

Paper Details

Date Published: 7 December 2010
PDF: 10 pages
Proc. SPIE 7821, Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V, 78211G (7 December 2010); doi: 10.1117/12.882192
Show Author Affiliations
A. Radu, Politehnica Univ. of Bucharest (Romania)

Published in SPIE Proceedings Vol. 7821:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies V
Paul Schiopu; George Caruntu, Editor(s)

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