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Proceedings Paper

Multiresolution mask writing
Author(s): Emile Sahouria
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Paper Abstract

We propose changing the shot pattern between passes in multi-pass vector e-beam writing in order to reduce total shot count. One pass is detailed while the other is simplified. Mask process correction is used to produce the correct image from the sum of the exposures; a fundamental contstraint is enforced to retain process latitude. Results from a software implementation show a total shot savings in the range of 18 to 31 percent for two-pass writing versus the conventional writing scheme in which each pass writes identical shot sets. Simulation results demonstrate the feasibility of the technique.

Paper Details

Date Published: 1 April 2011
PDF: 9 pages
Proc. SPIE 7985, 27th European Mask and Lithography Conference, 798503 (1 April 2011); doi: 10.1117/12.881929
Show Author Affiliations
Emile Sahouria, Mentor Graphics Corp. (United States)


Published in SPIE Proceedings Vol. 7985:
27th European Mask and Lithography Conference
Uwe F.W. Behringer, Editor(s)

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