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Proceedings Paper

Enhancing sensitivity of semiconductor-based gas sensors on nanostructured surfaces
Author(s): Haibin Huo; Haizhou Ren; Cong Wang; Mengyan Shen
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Paper Abstract

The metal oxide semiconductor thin film gas sensors have been successfully fabricated on a nanospiked silicon surface formed with femtosecond laser irradiations. The sensors show significant response to CO gas at room temperature. It is well-known that the C-O is polarized with positive charges on oxygen atom and negative charges on carbon atom. When the currents pass through the semiconductor sensitive layer, some electrons may accumulate on the tips of the nanospikes to maintain the same electric potential on the surface, which results in strong local electrical fields near the tips of the nanospikes. Then more CO molecules will be pulled onto the tips of the nanospikes and this will enhance the sensitivity of the sensor. A gate bias enhancement has been studied on silicon/oxide layer/semiconductor architecture with the underlying silicon substrate as the back gate. The bias voltage applied on the gate can further enhance the sensitivities of the gas sensors by alternating the electron (or hole) concentration on the surfaces of the metal oxide semiconductor thin film.

Paper Details

Date Published: 18 April 2011
PDF: 7 pages
Proc. SPIE 7981, Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2011, 79815T (18 April 2011); doi: 10.1117/12.881784
Show Author Affiliations
Haibin Huo, Univ. of Massachusetts Lowell (United States)
Haizhou Ren, Univ. of Massachusetts Lowell (United States)
Cong Wang, Univ. of Massachusetts Lowell (United States)
Mengyan Shen, Univ. of Massachusetts Lowell (United States)


Published in SPIE Proceedings Vol. 7981:
Sensors and Smart Structures Technologies for Civil, Mechanical, and Aerospace Systems 2011
Masayoshi Tomizuka, Editor(s)

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