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Proceedings Paper

Control of slow axis mode behaviour with waveguide phase structures in semiconductor broad-area lasers
Author(s): Hans-Christoph Eckstein; Uwe D. Zeitner; Kemal Ahmed; Wolfgang Schmid; Uwe Strauss
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Paper Abstract

One of the most common methods to increase the output power of semiconductor waveguide lasers is broadening the stripe width of the active region. However, this results in higher order transverse modes to be amplified which impairs the beam quality and increases the beam divergence. By integrating optical elements into the cavity, it is possible to control the amplitude shape and the number of modes which are amplified in the laser. This paper reports on aspects to integrate phase and amplitude modifying microstructures into a semiconductor waveguide resonator by adding an additional lithographic step to the fabrication process of broad area laser diodes. The latest experimental results of such structured InGaAIP broad area lasers revealed a significant improvement of the beam quality even at a high operation current. Hence, the expansion of the stripe width of the amplifying region without degrading the beam quality is possible. The demonstrated power-current characteristics of structured laser diodes exhibit a low threshold current and a high efficiency.

Paper Details

Date Published: 16 February 2011
PDF: 6 pages
Proc. SPIE 7953, Novel In-Plane Semiconductor Lasers X, 79531J (16 February 2011); doi: 10.1117/12.881727
Show Author Affiliations
Hans-Christoph Eckstein, Fraunhofer Institute for Applied Optics and Precision Engineering (Germany)
Uwe D. Zeitner, Fraunhofer Institute for Applied Optics and Precision Engineering (Germany)
Kemal Ahmed, Fraunhofer Institute for Applied Optics and Precision Engineering (Germany)
Wolfgang Schmid, OSRAM Opto Semiconductors (Germany)
Uwe Strauss, OSRAM Opto Semiconductors (Germany)

Published in SPIE Proceedings Vol. 7953:
Novel In-Plane Semiconductor Lasers X
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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