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Proceedings Paper

Sensitive polysulfone based chain scissioning resists for 193nm lithography
Author(s): Yong Keng Goh; Lan Chen; Anneke Dorgelo; Xie Peng; Neal Lafferty; Bruce Smith; Paul Zimmerman; Warren Montgomery; Idriss Blakey; Andrew K. Whittaker
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Paper Abstract

Chain scissioning resists do not require addition of photoacid generators to function. Previously reported chain scissioning polysulfone resists were able to achieve enhanced sensitivity by incorporation of absorbing repeat units, but these groups also inhibited the depolymerization reaction, which could further enhance sensitivity. Here we report the development of sensitive polysulfone chain scissioning resists for 193 nm that are able to undergo depolymerization. The effect of depolymerization of LER is also discussed. These polymers underwent CD shrinkage upon overdose, which may be useful for double patterning processes.

Paper Details

Date Published: 16 April 2011
PDF: 8 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79722E (16 April 2011); doi: 10.1117/12.881700
Show Author Affiliations
Yong Keng Goh, The Univ. of Queensland (Australia)
Lan Chen, The Univ. of Queensland (Australia)
Anneke Dorgelo, The Univ. of Queensland (Australia)
Xie Peng, Rochester Institute of Technology (United States)
Neal Lafferty, Rochester Institute of Technology (United States)
Bruce Smith, Rochester Institute of Technology (United States)
Paul Zimmerman, Intel Corp. (United States)
Warren Montgomery, Sematech (United States)
Idriss Blakey, The Univ. of Queensland (Australia)
Andrew K. Whittaker, The Univ. of Queensland (Australia)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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