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Proceedings Paper

Acid proliferation to improve the sensitivity of EUV resists: a pulse radiolysis study
Author(s): Kazuyuki Enomoto; Koji Arimitsu; Atsutaro Yoshizawa; Hiroki Yamamoto; Akihiro Oshima; Takahiro Kozawa; Seiichi Tagawa
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Paper Abstract

The yields of acid have been measured in the electron-beam irradiation of triphenylsulfonium triflate (TPS-Tf) and pinanediol monosulfonates, which consist of tosylate (PiTs), 4-fluorobenzenesulfonate (Pi1F), or 4-trifluoromethylbenzenesulfonate (Pi3F), as an acid amplifier blended in 4-hydroxystyrene matrixes. The acid yields efficiency decreases when PiTs is present, while its efficiency increases in the presence of Pi3F. Reactions of the electrons with TPS-Tf and pinanediol monosulfonates have been studied using pulse radiolysis in liquid tetrahydrofuran (THF) to evaluate the kinetic contributions to acid production. The THF-solvated electrons react with PiTs, Pi1F, and Pi3F to produce the corresponding radical anions; the rate constants are estimated to be 4.1, 5.1, and 9.2 × 1010 M-1 s-1, respectively. Electron transfer from PiTs•-, Pi1F•-, and Pi3F•- radical anions to TPS-Tf occurs with the rate constants of 5.7×1010, 1.2×1011, and 6.3 × 1010 M-1 s-1, respectively. The long-lived Pi3F•- efficiently undergoes the electron transfer to TPS-Tf to form the TPS-Tf•-, which subsequently decompose to generate TfOH. On the other hand, the decay channels of PiTs•- and Pi1F•-, which possess a relatively short lifetime, are presumably dependent on its reactions with solvated protons (charge recombination) rather than the electron transfer to TPS-Tf. The novel acid production pathway via the electron transfer from pinanediol monosulfonate radical anions to TPS-Tf is presented.

Paper Details

Date Published: 8 April 2011
PDF: 10 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79692M (8 April 2011); doi: 10.1117/12.881672
Show Author Affiliations
Kazuyuki Enomoto, Osaka Univ. (Japan)
CREST/JST (Japan)
Koji Arimitsu, Tokyo Univ. of Science (Japan)
Atsutaro Yoshizawa, Tokyo Univ. of Science (Japan)
Hiroki Yamamoto, Osaka Univ. (Japan)
CREST/JST (Japan)
Akihiro Oshima, Osaka Univ. (Japan)
Takahiro Kozawa, Osaka Univ. (Japan)
CREST/JST (Japan)
Seiichi Tagawa, Osaka Univ. (Japan)
CREST/JST (Japan)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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