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Proceedings Paper

Recessive self-aligned double patterning with gap-fill technology
Author(s): Yijian Chen; Xumou Xu; Yongmei Chen; Liyan Miao; Hao Chen; Pokhui Blanco; Chris S. Ngai
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Paper Abstract

In this paper, a recessive self-aligned double patterning (RSADP) process enabled by gap-fill technology is proposed and developed for BEOL applications. FEOL application is also possible by adding gap-fill/CMP steps to reverse the tone of contact/trench patterns. Compared with positive-tone spacer self-aligned double patterning (SADP), RSADP technique can reduce the process complexity by using less masks to pattern 2-D features. With a RSADP process, we successfully demonstrate (half-pitch) 50nm contact and 30nm line/space patterns using dry lithography.

Paper Details

Date Published: 22 March 2011
PDF: 7 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79731S (22 March 2011); doi: 10.1117/12.881658
Show Author Affiliations
Yijian Chen, Applied Materials, Inc. (United States)
Xumou Xu, Applied Materials, Inc. (United States)
Yongmei Chen, Applied Materials, Inc. (United States)
Liyan Miao, Applied Materials, Inc. (United States)
Hao Chen, Applied Materials, Inc. (United States)
Pokhui Blanco, Applied Materials, Inc. (United States)
Chris S. Ngai, Applied Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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