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Proceedings Paper

EUV underlayer materials for 22nm HP and beyond
Author(s): Huirong Yao; Zachary Bogusz; Jianhui Shan; Joonyeon Cho; Salem Mullen; Guanyang Lin; Mark Neisser
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Paper Abstract

EUV lithography is expected to be an important technology for manufacturing 22 nm node and beyond in the semiconductor industry. To achieve the desired resist RLS performance for such fine feature patterns, multilayer materials are almost certainly needed to define the overall lithography process. The resist modeling and experiment studies suggest high EUV absorbance of the film improves resolution, line width roughness and sensitivity. In this paper, we report the studies of new EUV underlayers (EBL) based on crosslinkable organic underlayer materials with high EUV photon absorption (EPA) unit. The lithography results for the new EUV underlayer materials have demonstrated advantages over conventional organic underlayer in terms of resist sensitivity, resolution, process window, pattern profile, collapse margin, and possibly line width roughness.

Paper Details

Date Published: 16 April 2011
PDF: 9 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797212 (16 April 2011); doi: 10.1117/12.881639
Show Author Affiliations
Huirong Yao, AZ Electronic Materials USA Corp. (United States)
Zachary Bogusz, AZ Electronic Materials USA Corp. (United States)
Jianhui Shan, AZ Electronic Materials USA Corp. (United States)
Joonyeon Cho, AZ Electronic Materials USA Corp. (United States)
Salem Mullen, AZ Electronic Materials USA Corp. (United States)
Guanyang Lin, AZ Electronic Materials USA Corp. (United States)
Mark Neisser, AZ Electronic Materials USA Corp. (United States)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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