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Proceedings Paper

Next generation of Z* modelling tool for high intensity EUV and soft x-ray plasma sources simulations
Author(s): S. V. Zakharov; V. S. Zakharov; P. Choi; A. Y. Krukovskiy; V. G. Novikov; A. D. Solomyannaya; A. V. Berezin; A. S. Vorontsov; M. B. Markov; S. V. Parot'kin
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Paper Abstract

In the specifications for EUV sources, high EUV power at IF for lithography HVM and very high brightness for actinic mask and in-situ inspections are required. In practice, the non-equilibrium plasma dynamics and self-absorption of radiation limit the in-band radiance of the plasma and the usable radiation power of a conventional single unit EUV source. A new generation of the computational code Z* is currently developed under international collaboration in the frames of FP7 IAPP project FIRE for modelling of multi-physics phenomena in radiation plasma sources, particularly for EUVL. The radiation plasma dynamics, the spectral effects of self-absorption in LPP and DPP and resulting Conversion Efficiencies are considered. The generation of fast electrons, ions and neutrals is discussed. Conditions for the enhanced radiance of highly ionized plasma in the presence of fast electrons are evaluated. The modelling results are guiding a new generation of EUV sources being developed at Nano-UV, based on spatial/temporal multiplexing of individual high brightness units, to deliver the requisite brightness and power for both lithography HVM and actinic metrology applications.

Paper Details

Date Published: 8 April 2011
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796932 (8 April 2011); doi: 10.1117/12.881637
Show Author Affiliations
S. V. Zakharov, NANO-UV SAS (France)
EPPRA SAS (France)
Kurchatov Institute (Russian Federation)
V. S. Zakharov, EPPRA SAS (France)
Kurchatov Institute (Russian Federation)
P. Choi, NANO-UV SAS (France)
EPPRA SAS (France)
A. Y. Krukovskiy, Keldysh Institute of Applied Mathematics (Russian Federation)
V. G. Novikov, Keldysh Institute of Applied Mathematics (Russian Federation)
A. D. Solomyannaya, Keldysh Institute of Applied Mathematics (Russian Federation)
A. V. Berezin, Keldysh Institute of Applied Mathematics (Russian Federation)
A. S. Vorontsov, Keldysh Institute of Applied Mathematics (Russian Federation)
M. B. Markov, Keldysh Institute of Applied Mathematics (Russian Federation)
S. V. Parot'kin, Keldysh Institute of Applied Mathematics (Russian Federation)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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