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Proceedings Paper

TSOM method for semiconductor metrology
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Paper Abstract

Through-focus scanning optical microscopy (TSOM) is a new metrology method that achieves 3D nanoscale measurement sensitivity using conventional optical microscopes; measurement sensitivities are comparable to what is typical when using scatterometry, scanning electron microscopy (SEM), and atomic force microscopy (AFM). TSOM can be used in both reflection and transmission modes and is applicable to a variety of target materials and shapes. Nanometrology applications that have been demonstrated by experiments or simulations include defect analysis, inspection and process control; critical dimension, photomask, overlay, nanoparticle, thin film, and 3D interconnect metrologies; line-edge roughness measurements; and nanoscale movements of parts in MEMS/NEMS. Industries that could benefit include semiconductor, data storage, photonics, biotechnology, and nanomanufacturing. TSOM is relatively simple and inexpensive, has a high throughput, and provides nanoscale sensitivity for 3D measurements with potentially significant savings and yield improvements in manufacturing.

Paper Details

Date Published: 20 April 2011
PDF: 15 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79710T (20 April 2011); doi: 10.1117/12.881620
Show Author Affiliations
Ravikiran Attota, National Institute of Standards and Technology (United States)
Ronald G. Dixson, National Institute of Standards and Technology (United States)
John A. Kramar, National Institute of Standards and Technology (United States)
James E. Potzick, National Institute of Standards and Technology (United States)
András E. Vladár, National Institute of Standards and Technology (United States)
Benjamin Bunday, SEMATECH (United States)
Erik Novak, Bruker Nano Surfaces Division (United States)
Andrew Rudack, SEMATECH (United States)


Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)

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