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Proceedings Paper

Developable BARC (DBARC) technology as a solution to today's implant lithography challenges
Author(s): James Cameron; Jin Wuk Sung; Sabrina Wong; Adam Ware; Yoshihiro Yamamoto; Hiroaki Kitaguchi; Libor Vyklicky; Steve Holmes; Irene Popova; Ranee Kwong; Pushkara Rao Varanasi
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Paper Abstract

As patterning of implant layers becomes increasingly challenging it is clear that the standard resist/Top Antireflective Coating (TARC) process may be soon be limited in terms of its ability to meet implant targets at future nodes. A particularly attractive solution for patterning implant levels is the use of a Developable Bottom Anti-Reflective Coating (DBARC). Similar to a conventional BARC, a DBARC controls reflectivity from the underlying substrate by absorbing the incident radiation thereby minimizing detrimental effects of reflected light. However, unlike a conventional Bottom Anti-Reflective Coating (BARC) which requires a BARC open etch step, the DBARC is developed with the resist in a single step leaving the substrate ready for implantation. These properties make DBARC very attractive for implant layers. In this paper, we report on the development of KrF and ArF DBARCs for implant applications. Our primary interest is in developing solutions for patterning Post-Gate implant levels. We briefly describe our fundamental design concepts and demonstrate the concepts are robust as we develop ARTM602 DBARC to address the criteria for a production worthy DBARC. This includes data on EBR performance, drain line compatibility, sublimation and footing coverage over topography. In terms of lithographic performance, we demonstrate improved capability over the incumbent SLR/TARC process in many key areas. This includes through pitch performance, process window and profile integrity over topography for both KrF and ArF DBARC solutions. Several strategies to enhance profile by resist/DBARC matching are also demonstrated. From a platform robustness standpoint, we show that AR602 DBARC is ready for high volume manufacturing in terms of batch to batch control and shelf life.

Paper Details

Date Published: 16 April 2011
PDF: 10 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797214 (16 April 2011); doi: 10.1117/12.881614
Show Author Affiliations
James Cameron, Dow Electronic Materials (United States)
Jin Wuk Sung, Dow Electronic Materials (United States)
Sabrina Wong, Dow Electronic Materials (United States)
Adam Ware, Dow Electronic Materials (United States)
Yoshihiro Yamamoto, Dow Electronic Materials (Japan)
Hiroaki Kitaguchi, Dow Electronic Materials (Japan)
Libor Vyklicky, IBM Corp. (United States)
Steve Holmes, IBM Corp. (United States)
Irene Popova, IBM Corp. (United States)
Ranee Kwong, IBM Corp. (United States)
Pushkara Rao Varanasi, IBM Corp. (United States)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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