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Proceedings Paper

Additive-loaded EUV photoresists: performance enhancement and the underlying physics
Author(s): Vikram K. Daga; Ying Lin; James J. Watkins; Uzodinma Okoroanyanwu; Karen Petrillo; Dominic Ashworth; Hua-Gen Peng; Christopher L. Soles
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Paper Abstract

A series of molecular glasses (MGs) protected with multiple tert-butoxylcarbonylmethyl (tBCM) groups are employed as additives to enhance extreme ultra violet (EUV) photolithographic performance of a hydroxystyrene based Environmentally Stable Chemically Amplified Photoresist (ESCAP). The tBCM groups deprotect to form carboxylic acids that are capable of hydrogen bonding with chain segments of the polymer resist. This approach enables a systematic study of the governing physics underlying the improved lithographic performance. While MGs inhibit solubility in all cases, we find that differences in the structure of the MGs can significantly affect the photoacid diffusivity. In our ongoing optimization of the structure and loading of MGs, photoacid generators (PAGs), and base quenchers, 25 nm to 30 nm resolution has been achieved. The structure-property relationships and the synergistic effects of employing small, multi-functional additives in the polymeric photoresists are studied using various characterizations.

Paper Details

Date Published: 29 March 2011
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 796907 (29 March 2011); doi: 10.1117/12.881613
Show Author Affiliations
Vikram K. Daga, Univ. of Massachusetts Amherst (United States)
Ying Lin, Univ. of Massachusetts Amherst (United States)
James J. Watkins, Univ. of Massachusetts Amherst (United States)
Uzodinma Okoroanyanwu, GLOBALFOUNDRIES Inc. (United States)
Karen Petrillo, SEMATECH (United States)
Dominic Ashworth, SEMATECH (United States)
Hua-Gen Peng, National Institute of Standards and Technology (United States)
Christopher L. Soles, National Institute of Standards and Technology (United States)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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