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Proceedings Paper

Solutions for 22-nm node patterning using ArFi technology
Author(s): Jo Finders; Mircea Dusa; Jan Mulkens; Yu Cao; Maryana Escalante
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Paper Abstract

ArF immersion lithography will be the main candidate for lithography patterning at the 22nm node. For both logic and memory type applications, double patterning techniques have to be applied to reach design pitches well below 70nm. In the lithography this combines aggressive imaging at low k1 (0.28... 0.31) and aggressive absolute CDU requirements (approximately 6-10% of nominal CD) of 1.5..2nm 3σ. We will look into the lithography requirements to achieve such aggressive CDU numbers and will discuss solutions for achieving the required level of intra-field, inter-field, waferto- wafer and scanner-to-scanner CD variations

Paper Details

Date Published: 5 April 2011
PDF: 16 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79730U (5 April 2011); doi: 10.1117/12.881598
Show Author Affiliations
Jo Finders, ASML (Netherlands)
Mircea Dusa, ASML (Netherlands)
Jan Mulkens, ASML (Netherlands)
Yu Cao, Brion Technologies, Inc. (United States)
Maryana Escalante, ASML (Netherlands)

Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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