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Proceedings Paper

On the extensibility of extreme UV lithography
Author(s): Shinn-Sheng Yu; Anthony Yen; Shu-Hao Chang; Chih-T'sung Shih; Yen-Cheng Lu; Jimmy Hu; Timothy Wu
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Paper Abstract

In this paper, definition of line/space patterns at 44-, 32-, and 22-nm pitches using extreme-ultraviolet lithography (EUVL) is investigated by aerial image simulation. The results indicate that extending EUVL to the 22-nm pitch requires reducing the mask shadowing effect, which implies reducing the mask absorber thickness as well as maintaining the 6-degree angle of incidence on the mask, if the reduction ratio of the imaging system is to be kept at 4. Reduction of the mask absorber thickness can be realized by implementing attenuated phase-shifting masks. Otherwise, all critical patterns must be laid out in single orientation.

Paper Details

Date Published: 8 April 2011
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79693A (8 April 2011); doi: 10.1117/12.881586
Show Author Affiliations
Shinn-Sheng Yu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Shu-Hao Chang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chih-T'sung Shih, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Yen-Cheng Lu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Jimmy Hu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Timothy Wu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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