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Proceedings Paper

Printability of buried mask defects in extreme UV lithography
Author(s): Pei-Cheng Hsu; Ming-Jiun Yao; Wen-Chang Hsueh; Chia-Jen Chen; Shin-Chang Lee; Ching-Fang Yu; Luke Hsu; Sheng-Ji Chin; Jimmy Hu; Shu-Hao Chang; Chih-T'sung Shih; Yen-Cheng Lu; Timothy Wu; Shinn-Sheng Yu; Anthony Yen
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Paper Abstract

A programmed-defect mask consisting of both bump- and pit-type defects on the LTEM mask substrate has been successfully fabricated. It is seen that pit-type defects are less printable because they are more smoothed out by the employed MLM deposition process. Specifically, all bump-type defects print even at the smallest height split of 1.7 nm whereas pit-type defects print only at the largest depth split of 5.7 nm. At this depth, the largest nonprintable 1D and 2D defect widths are about 23 nm and 64 nm, respectively.

Paper Details

Date Published: 7 April 2011
PDF: 11 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79691D (7 April 2011); doi: 10.1117/12.881583
Show Author Affiliations
Pei-Cheng Hsu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Ming-Jiun Yao, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Wen-Chang Hsueh, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chia-Jen Chen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Shin-Chang Lee, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Ching-Fang Yu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Luke Hsu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Sheng-Ji Chin, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Jimmy Hu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Shu-Hao Chang, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Chih-T'sung Shih, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Yen-Cheng Lu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Timothy Wu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Shinn-Sheng Yu, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)
Anthony Yen, Taiwan Semiconductor Manufacturing Co. Ltd. (Taiwan)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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