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Proceedings Paper

The SEMATECH Berkeley MET: extending EUV learning down to 16nm half pitch
Author(s): Christopher N. Anderson; Lorie Mae Baclea-An; Paul E. Denham; Simi A. George; Kenneth A. Goldberg; Michael S. Jones; Nathan S. Smith; Thomas I. Wallow; Warren Montgomery; Patrick P. Naulleau
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Paper Abstract

Several high-performing resists identified in the past two years have been exposed at the 0.3-numerical-aperture (NA) SEMATECH Berkeley Microfield Exposure Tool (BMET) with an engineered dipole illumination optimized for 18-nm half pitch. Five chemically amplified platforms were found to support 20-nm dense patterning at a film thickness of approximately 45 nm. At 19-nm half pitch, however, scattered bridging kept all of these resists from cleanly resolving larger areas of dense features. At 18-nm half pitch, none of the resists were are able to cleanly resolve a single line within a bulk pattern. With this same illumination a directly imageable metal oxide hardmask showed excellent performance from 22-nm half pitch to 17-nm half pitch, and good performance at 16-nm half pitch, closely following the predicted aerial image contrast. This indicates that observed limitations of the chemically amplified resists are indeed coming from the resist and not from a shortcoming of the exposure tool. The imageable hardmask was also exposed using a Pseudo Phase-Shift-Mask technique and achieved clean printing of 15-nm half pitch lines and modulation all the way down to the theoretical 12.5-nm resolution limit of the 0.3-NA SEMATECH BMET.

Paper Details

Date Published: 5 April 2011
PDF: 6 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690R (5 April 2011); doi: 10.1117/12.881573
Show Author Affiliations
Christopher N. Anderson, Lawrence Berkeley National Lab. (United States)
Lorie Mae Baclea-An, Lawrence Berkeley National Lab. (United States)
Paul E. Denham, Lawrence Berkeley National Lab. (United States)
Simi A. George, Lawrence Berkeley National Lab. (United States)
Kenneth A. Goldberg, Lawrence Berkeley National Lab. (United States)
Michael S. Jones, Lawrence Berkeley National Lab. (United States)
Nathan S. Smith, Lawrence Berkeley National Lab. (United States)
Thomas I. Wallow, GLOBALFOUNDRIES Inc. (United States)
Warren Montgomery, SEMATECH (United States)
Patrick P. Naulleau, Lawrence Berkeley National Lab. (United States)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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