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Proceedings Paper

Wafer quality analysis of various scribe line mark designs
Author(s): Jianming Zhou; Craig Hickman; Yuan He; Scott Light; Lucas Lamonds; Anton deVilliers
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Paper Abstract

Scribe Line Marks (SLM) printed on substrates are a standard method used by modern scanners for wafer alignment. Light reflected from the SLM forms a diffraction pattern which is used to determine the exact position of the wafer. The signal strength of the diffraction order needs to reach a certain threshold for the scanner to detect it. The marks are changed as the wafers go through various processes and are buried underneath complex film stacks. These processes and stacks can severely reduce wafer quality (WQ). Equipment manufactures recommend several variations of the SLM to improve WQ but these variations are not effective for certain advanced processes. This paper discusses theoretical analysis of how SLM designs affect wafer quality, addresses the challenge of self-aligned double patterning (SADP) on SLMs and experimentally verifies results using various structures.

Paper Details

Date Published: 20 April 2011
PDF: 9 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79711H (20 April 2011); doi: 10.1117/12.881551
Show Author Affiliations
Jianming Zhou, Micron Technology, Inc. (United States)
Craig Hickman, Micron Technology, Inc. (United States)
Yuan He, Micron Technology, Inc. (United States)
Scott Light, Micron Technology, Inc. (United States)
Lucas Lamonds, Micron Technology, Inc. (United States)
Anton deVilliers, Micron Technology, Inc. (United States)

Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)

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