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Proceedings Paper

EUV defect characterization study on post litho and etch for 1x and 2x node processes
Author(s): Ofir Montal; Man-Ping Cai; Kfir Dotan; Ido Dolev; Tom Wallow; Obert Wood; Uzo Okoroanyanwu; Moshe Rozentsvige; Chris Ngai; Chris Bencher; Amiad Conley
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Paper Abstract

EUV mask metrology and inspection challenges as well as EUV patterned wafer metrology and inspection strategies must be addressed to enable EUV patterning for pilot and high volume production. In this work we present a defectivity analysis of defects from post EUV lithography and etch and the correlation between them on 40nm and 28nm half pitch (HP) line/space structures. The objective of the work was to study the lithography and etch process window vs. pitch as well as to characterize the performance of a DUV brightfield wafer inspection system on EUV stacks in order to detect EUV related DOI's. In addition to defect characterization for the lithography and etch layers, we present the results of scattering simulation from these layers, with polarized 266nm DUV illumination, to provide insight on the light-pattern interaction and on the critical detection parameters.

Paper Details

Date Published: 20 April 2011
PDF: 10 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 797126 (20 April 2011); doi: 10.1117/12.881518
Show Author Affiliations
Ofir Montal, Applied Materials (Israel)
Man-Ping Cai, Applied Materials (United States)
Kfir Dotan, Applied Materials (United States)
Ido Dolev, Applied Materials (Israel)
Tom Wallow, GLOBALFOUNDRIES Inc. (United States)
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Uzo Okoroanyanwu, GLOBALFOUNDRIES Inc. (United States)
Moshe Rozentsvige, Applied Materials (Israel)
Chris Ngai, Applied Materials, Inc. (United States)
Chris Bencher, Applied Materials, Inc. (United States)
Amiad Conley, Applied Materials (Israel)


Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)

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