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Proceedings Paper

Amplification and lasing at M-band of luminescence
Author(s): P. I. Khadzhi; I. V. Beloussov; N. N. Rosanov; S. V. Fedorov; D. A. Markov; A. V. Corovai
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Paper Abstract

A new lasing mechanism for semiconductors like CuCl, CuBr is proposed based on the two-photon pumping of biexcitons from the ground state of the crystal and generation or amplification of light in the region of M-band of luminescence due to the optical exciton-biexciton conversion. It was shown that the net gain essentially depends on the level of two-photon pumping and rapidly decreases deep into the crystal due to the spatial depletion of pump radiation. Estimations for CuCl give the values of lasing photons with the energy about 3,2 eV and the maximum small signal gain about the value of the exciton absorption coefficient.

Paper Details

Date Published: 7 February 2011
PDF: 6 pages
Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799404 (7 February 2011); doi: 10.1117/12.881507
Show Author Affiliations
P. I. Khadzhi, Institute of Applied Physics (Moldova)
Dniester State Univ. (Moldova)
I. V. Beloussov, Institute of Applied Physics (Moldova)
N. N. Rosanov, Vavilov State Optical Institute (Russian Federation)
S. V. Fedorov, Vavilov State Optical Institute (Russian Federation)
D. A. Markov, Dniester State Univ. (Moldova)
A. V. Corovai, Dniester State Univ. (Moldova)

Published in SPIE Proceedings Vol. 7994:
LAT 2010: International Conference on Lasers, Applications, and Technologies
Vladislav Panchenko; Gérard Mourou; Aleksei M. Zheltikov, Editor(s)

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