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Proceedings Paper

Quantum efficiency increasing and lasing in the quantum wells based on ZnO
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Paper Abstract

The Mg0.27Zn0.73O/ZnO multiple quantum wells with different well width Lw have been grown by pulsed laser deposition method. The interface roughness of quantum wells was inherited from the bottom one and did not exceed 1 nm. The quantum confinement effect has been observed. The exciton binding energy of the two-dimensional Mg0.27Zn0.73O/ZnO structures was two times higher in comparison with the bulk ZnO. A sharp increase of exciton peak intensity in the photoluminescence spectra at well width reduction was observed. The optical excited stimulated emission in quantum wells Mg 0.27Zn0.73O/ZnO with an excitation threshold ~210 kW/cm2 has been demonstrated.

Paper Details

Date Published: 8 February 2011
PDF: 7 pages
Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 79940T (8 February 2011); doi: 10.1117/12.881484
Show Author Affiliations
Andrey A. Lotin, Institute on Laser and Information Technologies (Russian Federation)
Oleg A. Novodvorsky, Institute on Laser and Information Technologies (Russian Federation)
Liubov S. Parshina, Institute on Laser and Information Technologies (Russian Federation)
Evgeny V. Khaydukov, Institute on Laser and Information Technologies (Russian Federation)
Dmitry A. Zuev, Institute on Laser and Information Technologies (Russian Federation)
Olga D. Khramova, Institute on Laser and Information Technologies (Russian Federation)
Vladislav Ya. Panchenko, Institute on Laser and Information Technologies (Russian Federation)


Published in SPIE Proceedings Vol. 7994:
LAT 2010: International Conference on Lasers, Applications, and Technologies
Vladislav Panchenko; Gérard Mourou; Aleksei M. Zheltikov, Editor(s)

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