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Proceedings Paper

Characterization of EUV resists for defectivity at 32nm
Author(s): Ofir Montal; Ido Dolev; Moshe Rosenzweig; Kfir Dotan; Doron Meshulach; Ofer Adan; Shimon Levi; Man-Ping Cai; Chris Bencher; Chris S. Ngai; Christiane Jehoul; Dieter Van Den Heuvel; Eric Hendrickx
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Paper Abstract

Extreme ultraviolet (EUV) lithography is considered as the leading patterning technology beyond the ArF-based optical lithography, addressing the need for transistor densification to meet Moore's Law. Theoretically, EUV lithography at 13.5nm wavelength meets the resolution requirements for 1xnm technology nodes. However, there are several major challenges in the development of EUV lithography for mass production of advanced CMOS devices. These include the development of high power EUV light sources, EUV optics, EUV masks, EUV resists, overlay accuracy, and metrology and inspection capabilities. In particular, it is necessary to ensure that effective defect control schemes will be made available to reduce the EUV lithography defectivity to acceptable levels. This paper presents a study on the wafer defectivity and characterization of patterned EUV resists, with the objective of providing a quantitative comparison between the defectivity of different resist materials and different stacks. Patterned wafers were printed using the ASML® EUV full-field Alpha-Demo Tool (ADT 0.25 NA) at imec. The EUV resist patterns were 32nm line/spaces. Several advanced resist types were screened experimentally. The different resist types and stacks were inspected using a DUV laser based brightfield inspection tool, followed by a SEM defect review and CD metrology measurements. The patterns were characterized in terms of defect types and defect density. We identified the major defect types and discuss factors that affect the defectivity level and pattern quality, such as resist type, exposure dose and focus. Defect scattering analysis of DUV polarized light at different polarizations was performed, to indicate on the inspection performance trends for a variety of defect types and sizes of the different resists and stacks. The scattering analysis shows that higher defect scattering is induced using polarized light.

Paper Details

Date Published: 20 April 2011
PDF: 11 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79710G (20 April 2011); doi: 10.1117/12.881323
Show Author Affiliations
Ofir Montal, Applied Materials (Israel)
Ido Dolev, Applied Materials (Israel)
Moshe Rosenzweig, Applied Materials (Israel)
Kfir Dotan, Applied Materials (Israel)
Doron Meshulach, Applied Materials (Israel)
Ofer Adan, Applied Materials (Israel)
Shimon Levi, Applied Materials (Israel)
Man-Ping Cai, Applied Materials, Inc. (United States)
Chris Bencher, Applied Materials, Inc. (United States)
Chris S. Ngai, Applied Materials, Inc. (United States)
Christiane Jehoul, IMEC (Belgium)
Dieter Van Den Heuvel, IMEC (Belgium)
Eric Hendrickx, IMEC (Belgium)


Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)

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