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Proceedings Paper

Metrology of micro-step height structures using 3D scatterometry in 4x-nm advance DRAM
Author(s): Mason Duan; Clark Chen; Calvin Hsu; Elvis Wang; ZhiQing Xu; Elsie Yu; Qiongyan Yuan; Sungchul Yoo; Zhengquan Tan
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Paper Abstract

As DRAM design rules scale below 4Xnm, controlling the micro-step height caused by the etching process after patterning becomes more critical because it affects the post Chemical Mechanical Planarization (CMP) process window and furthermore affects yield. In this study, the latest Multi-Azimuth angle capability of Scatterometry Critical Dimension (SCD) was used to analyze the model of the micro-step height of nitride. SCD results were verified with Atomic Force Microscope (AFM) measurements.

Paper Details

Date Published: 20 April 2011
PDF: 7 pages
Proc. SPIE 7971, Metrology, Inspection, and Process Control for Microlithography XXV, 79712J (20 April 2011); doi: 10.1117/12.881322
Show Author Affiliations
Mason Duan, Inotera Memories Inc. (Taiwan)
Clark Chen, KLA-Tencor Corp. (United States)
Calvin Hsu, KLA-Tencor Corp. (United States)
Elvis Wang, Inotera Memories Inc. (Taiwan)
ZhiQing Xu, Inotera Memories Inc. (Taiwan)
Elsie Yu, KLA-Tencor Corp. (United States)
Qiongyan Yuan, KLA-Tencor Corp. (United States)
Sungchul Yoo, KLA-Tencor Corp. (United States)
Zhengquan Tan, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 7971:
Metrology, Inspection, and Process Control for Microlithography XXV
Christopher J. Raymond, Editor(s)

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