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Proceedings Paper

Self-assembly patterning for sub-15nm half-pitch: a transition from lab to fab
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Paper Abstract

Directed self-assembly is an emerging technology that to-date has been primarily driven by research efforts in university and corporate laboratory environments. Through these environments, we have seen many promising demonstrations of forming self-assembled structures with small half pitch (<15 nm), registration control, and various device-oriented shapes. Now, the attention turns to integrating these capabilities into a 300mm pilot fab, which can study directed selfassembly in the context of a semiconductor fabrication environment and equipment set. The primary aim of this study is to create a 300mm baseline process of record using a 12nm half-pitch PS-b-PMMA lamellae block copolymer in order to establish an initial measurement of the defect density due to inherent polymer phase separation defects such as dislocations and disclinations.

Paper Details

Date Published: 2 April 2011
PDF: 9 pages
Proc. SPIE 7970, Alternative Lithographic Technologies III, 79700F (2 April 2011); doi: 10.1117/12.881293
Show Author Affiliations
Chris Bencher, Applied Materials, Inc. (United States)
Jeffrey Smith, Applied Materials, Inc. (United States)
Liyan Miao, Applied Materials, Inc. (United States)
Cathy Cai, Applied Materials, Inc. (United States)
Yongmei Chen, Applied Materials, Inc. (United States)
Joy Y. Cheng, IBM Almaden Research Ctr. (United States)
Daniel P. Sanders, IBM Almaden Research Ctr. (United States)
Melia Tjio, IBM Almaden Research Ctr. (United States)
Hoa D. Truong, IBM Almaden Research Ctr. (United States)
Steven Holmes, IBM Albany Nanotech (United States)
William D. Hinsberg, IBM Almaden Research Ctr. (United States)

Published in SPIE Proceedings Vol. 7970:
Alternative Lithographic Technologies III
Daniel J. C. Herr, Editor(s)

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