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Proceedings Paper

Optimization of organic NLO materials for integration with silicon photonic, plasmonic (metal optics), and metamaterial devices
Author(s): Larry R. Dalton; Alex K.-Y. Jen; Bruce H. Robinson; Rene Overney; Stephanie J. Benight; Daniel B. Knorr; Seongku Kim; Harold R. Fetterman; Cheng Zhang
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Paper Abstract

Specific spatially-anisotropic interactions are identified that enhance noncentrosymmetric order required for electro-optic activity. Enhancement of electric-field-poling-induced noncentrosymmetric order by these specific interactions is shown to result from a reduction of lattice dimensionality from three to two dimensions. New analytical techniques for measurement of centrosymmetric and noncentrosymmetric order and lattice dimensionality are introduced. Measurement of order parameters is correlated with viscoelastic data to gain further insight into the influence of specific interactions on poling efficiency and thus material electro-optic activity. The integration of organic electro-optic materials into silicon photonic, plasmonic, and metamaterial devices is also discussed. These device structures can affect the "effective" optical nonlinearity of organic materials but care must be exercised to control optical loss.

Paper Details

Date Published: 21 February 2011
PDF: 12 pages
Proc. SPIE 7935, Organic Photonic Materials and Devices XIII, 793502 (21 February 2011); doi: 10.1117/12.881264
Show Author Affiliations
Larry R. Dalton, Univ. of Washington (United States)
Alex K.-Y. Jen, Univ. of Washington (United States)
Bruce H. Robinson, Univ. of Washington (United States)
Rene Overney, Univ. of Washington (United States)
Stephanie J. Benight, Univ. of Washington (United States)
Daniel B. Knorr, Univ. of Washington (United States)
Seongku Kim, Univ. of California Los Angeles (United States)
Harold R. Fetterman, Univ. of California Los Angeles (United States)
Cheng Zhang, Norfolk State Univ. (United States)


Published in SPIE Proceedings Vol. 7935:
Organic Photonic Materials and Devices XIII
Robert L. Nelson; François Kajzar; Toshikuni Kaino; Yasuhiro Koike, Editor(s)

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