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Proceedings Paper

Antimony-based quantum dot memories
Author(s): Dieter Bimberg; Andreas Marent; Tobias Nowozin; Andrei Schliwa
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Paper Abstract

As a type-II heterostructure with exclusive hole confinement GaSb/(Al,Ga)As QDs are an ideal candidate for a QD based memory device operating at room temperature. We investigated different Antimony-based QDs in respect of localization energies and storage times with 8-band-k•p calculations as well as time-resolved capacitance spectroscopy. In addition, we present a memory concept based on self-organized quantum dots (QDs) which could fuse the advantages of today's main semiconductor memories DRAM and Flash. First results on the performance of such a memory cell are shown and a closer look at Sb-based QDs as a storage unit is taken.

Paper Details

Date Published: 1 March 2011
PDF: 7 pages
Proc. SPIE 7947, Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII, 79470L (1 March 2011); doi: 10.1117/12.881232
Show Author Affiliations
Dieter Bimberg, Technische Univ. Berlin (Germany)
Andreas Marent, Technische Univ. Berlin (Germany)
Tobias Nowozin, Technische Univ. Berlin (Germany)
Andrei Schliwa, Technische Univ. Berlin (Germany)


Published in SPIE Proceedings Vol. 7947:
Quantum Dots and Nanostructures: Synthesis, Characterization, and Modeling VIII
Kurt G. Eyink; Frank Szmulowicz; Diana L. Huffaker, Editor(s)

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