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Proceedings Paper

Defects in a bulk GaAs and Q-switching of a Nd:YAG laser with a GaAs output coupler
Author(s): Sh. Payziyev; S. Bakhramov; A. Kasimov; F. Shayimov
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Paper Abstract

By using a bulk GaAs as an output coupler as well as a saturable absorber, with changing of concentration of defects inside the laser cavity, Q-switching of flash-lamp pumped Nd:YAG laser has been studied. It is shown that the mechanism of formation of the laser pulses, in a wide range of duration which were reported in a lot of previous papers is caused by the intracavity changes of the defect concentration in a GaAs.

Paper Details

Date Published: 7 February 2011
PDF: 7 pages
Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 79940D (7 February 2011); doi: 10.1117/12.881110
Show Author Affiliations
Sh. Payziyev, Akadempribor Scientific and Production Association (Uzbekistan)
S. Bakhramov, Akadempribor Scientific and Production Association (Uzbekistan)
A. Kasimov, Akadempribor Scientific and Production Association (Uzbekistan)
F. Shayimov, Akadempribor Scientific and Production Association (Uzbekistan)


Published in SPIE Proceedings Vol. 7994:
LAT 2010: International Conference on Lasers, Applications, and Technologies
Vladislav Panchenko; Gérard Mourou; Aleksei M. Zheltikov, Editor(s)

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