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Proceedings Paper

Laser-based processes of ion implantation for Pt+/SiC gas sensor formation
Author(s): V. Yu. Fominski; A. G. Gnedovets; R. I. Romanov; M. V. Demin
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Paper Abstract

A relatively simple technique of high-energy ion implantation of the pulsed laser plasma under the influence of an external pulsed electric field is suggested. The developed mathematical model allows forecasting depth distribution of implanted atoms on the basis of experimental measurements of fundamental physical characteristics of the pulsed laser plasma and the technical parameters of high-voltage system. The possibility of implantation of platinum ions from laser plasma to create on-chip n-SiC hydrogen sensor for use in complicated conditions is demonstrated.

Paper Details

Date Published: 8 February 2011
PDF: 6 pages
Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799411 (8 February 2011); doi: 10.1117/12.881043
Show Author Affiliations
V. Yu. Fominski, National Research Nuclear Univ. MEPhI (Russian Federation)
A. G. Gnedovets, A. A. Baikov Institute of Metallurgy and Materials Science (Russian Federation)
R. I. Romanov, National Research Nuclear Univ. MEPhI (Russian Federation)
M. V. Demin, National Research Nuclear Univ. MEPhI (Russian Federation)


Published in SPIE Proceedings Vol. 7994:
LAT 2010: International Conference on Lasers, Applications, and Technologies
Vladislav Panchenko; Gérard Mourou; Aleksei M. Zheltikov, Editor(s)

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