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Proceedings Paper

Reactive pulsed laser deposition of WOx layers for SiC-based hydrogen sensor fabrication
Author(s): V. Yu. Fominski; A. G. Gnedovets; R. I. Romanov; M. V. Demin
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Paper Abstract

Peculiarities of WOx films fabrication by reactive pulsed laser deposition for high temperature Pt-oxide-SiC devices formation were investigated. Deposition of the oxide film was also carried out in such a way as to prevent deposition of droplet fraction (deposition with anti-droplet screen). Direct Simulation Monte Carlo and Kinetic Monte Carlo methods were performed for the deposition processes modeling. The response of the SiC-based devices to hydrogen-containing gases depends on the conditions of deposition of the oxide layer. The best properties were found in the sensor obtained by depositing the scattered flux of W atoms in a shady area on SiC substrate at an oxygen pressure of 10 Pa.

Paper Details

Date Published: 8 February 2011
PDF: 8 pages
Proc. SPIE 7994, LAT 2010: International Conference on Lasers, Applications, and Technologies, 799410 (8 February 2011); doi: 10.1117/12.880908
Show Author Affiliations
V. Yu. Fominski, National Research Nuclear Univ. MEPhI (Russian Federation)
A. G. Gnedovets, A. A. Baikov Institute of Metallurgy and Materials Science (Russian Federation)
R. I. Romanov, National Research Nuclear Univ. MEPhI (Russian Federation)
M. V. Demin, National Research Nuclear Univ. MEPhI (Russian Federation)


Published in SPIE Proceedings Vol. 7994:
LAT 2010: International Conference on Lasers, Applications, and Technologies
Vladislav Panchenko; Gérard Mourou; Aleksei M. Zheltikov, Editor(s)

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