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Proceedings Paper

Giant electrical control of magnetic anisotropy in magnetoelectric heterostructures using (011) PMN-PT single crystal
Author(s): Tao Wu; Alexandre Bur; Hyungsuk K. D. Kim; Ping Zhao; Gregory P. Carman
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Paper Abstract

We report giant electrical control of magnetic anisotropy in a magnetoelectric polycrystalline Ni thin film and (011)-oriented [Pb(Mg1/3Nb2/3)O3](1-x)-[PbTiO3]x (PMN-PT) heterostructure. The (011) PMN-PT ferroelectric substrate exhibits both linear anisotropic piezoelectric response and unique giant hysteretic response. These important features can significantly tune the magnetization states via strain coupling. Reversible and permanent magnetization reorientation demonstrates an approach for developing magnetoelectric memory devices.

Paper Details

Date Published: 28 April 2011
PDF: 8 pages
Proc. SPIE 7978, Behavior and Mechanics of Multifunctional Materials and Composites 2011, 797818 (28 April 2011); doi: 10.1117/12.880701
Show Author Affiliations
Tao Wu, Univ. of California, Los Angeles (United States)
Alexandre Bur, Univ. of California, Los Angeles (United States)
Hyungsuk K. D. Kim, Univ. of California, Los Angeles (United States)
Ping Zhao, Univ. of California, Los Angeles (United States)
Gregory P. Carman, Univ. of California, Los Angeles (United States)


Published in SPIE Proceedings Vol. 7978:
Behavior and Mechanics of Multifunctional Materials and Composites 2011
Zoubeida Ounaies; Stefan S. Seelecke, Editor(s)

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