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Investigation of EUV tapeout flow issues, requirements, and options for volume manufacturing
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Paper Abstract

Although technical issues remain to be resolved, EUV lithography is now a serious contender for critical layer patterning of upcoming 2X node memory and 14nm Logic technologies in manufacturing. If improvements continue in defectivity, throughput and resolution, then EUV lithography appears that it will be the most extendable and the cost-effective manufacturing lithography solution for sub-78nm pitch complex patterns. EUV lithography will be able to provide a significant relaxation in lithographic K1 factor (and a corresponding simplification of process complexity) vs. existing 193nm lithography. The increased K1 factor will result in some complexity reduction for mask synthesis flow elements (including illumination source shape optimization, design pre-processing, RET, OPC and OPC verification). However, EUV does add well known additional complexities and issues to mask synthesis flows such as across-lens shadowing variation, across reticle flare variation, new proximity effects to be modeled, significant increase in pre-OPC and fracture file size, etc. In this paper, we investigate the expected EUV-specific issues and new requirements for a production tapeout mask synthesis flow. The production EUV issues and new requirements are in the categories of additional physical effects to be corrected for; additional automation or flow steps needed; and increase in file size at different parts in the flow. For example, OASIS file sizes after OPC of 250GigaBytes (GB) and files sizes after mask data prep of greater than three TeraBytes (TB) are expected to be common. These huge file sizes will place significant stress on post-processing methods, OPC verification, mask data fracture, file read-in/read-out, data transfer between sites (e.g., to the maskshop), etc. With current methods and procedures, it is clear that the hours/days needed to complete EUV mask synthesis mask data flows would significantly increase if steps are not taken to make efficiency improvements. Therefore, we also analyze different options for reducing or alleviating the EUV specific issues mentioned above and the expected cost/benefit tradeoffs associated with these options. The options include understanding the accuracy vs. run-time benefit of different rule-based and model-based approaches for several correction issues; predicting the implications and improvements expected with different flow automation options; and estimating possible productivity improvements with different flow parallelization choices and upcoming multi-core processors. Optimal combinations of options and accuracy/effort/runtime results can be seen to enable EUV lithography tapeout flows to achieve equal or better total time when compared to current 193nm optical lithography tapeout flow times.

Paper Details

Date Published: 5 April 2011
PDF: 12 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690S (5 April 2011); doi: 10.1117/12.880230
Show Author Affiliations
Jonathan Cobb, Synopsys, Inc. (United States)
Sunghoon Jang, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Junghoon Ser, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Insung Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)
Johnny Yeap, Synopsys, Inc. (United States)
Kevin Lucas, Synopsys, Inc. (United States)
Munhoe Do, Synopsys Korea Inc. (Korea, Republic of)
Young-Chang Kim, SAMSUNG Electronics Co., Ltd. (Korea, Republic of)

Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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