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Proceedings Paper

Revisit pattern collapse for 14nm node and beyond
Author(s): Kenji Yoshimoto; Craig Higgins; Ananthan Raghunathan; John G. Hartley; Dario L. Goldfarb; Hirokazu Kato; Karen Petrillo; Matthew E. Colburn; Jeffrey Schefske; Obert Wood; Thomas I. Wallow
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Paper Abstract

In this study, we have analyzed new data sets of pattern collapse obtained from 300 mm wafers which were coated with a process-of-record (POR) EUV resist and exposed by an EUV Alpha-Demo tool (ADT) and a Vistec VB300 e-beam exposure tool. In order to minimize any processing effects on pattern collapse, the same POR EUV track process was applied to both exposures. A key metric of our analysis is the critical aspect ratio of collapse (CARC)1. We found that CARC of POR EUV resist decreases monotonically with spacing, in the range of ~1.8-2.2 at ~32-54 nm space (60-80 nm pitch) for EUV, and ~1.5-2.1 at ~16-50 nm space (~46-80 nm pitch) for e-beam. We also estimated an apparent Young's modulus of POR EUV resist by fitting a collapse model2 to the CARC data. The resulting modulus ~0.30 GPa was much smaller than the modulus of typical polymer glasses (~1.0-5.0 GPa). Our findings suggest that due to a significant decrease of resist mechanical properties and a sharp increase in capillary force, it will be challenging to maintain aspect ratios above 2.0 for sub-30 nm resist spacing (sub-60 nm pitches). For patterning at these dimensions, alternate processes and materials will become increasingly necessary, e.g. surfactant-based rinse solutions3 and other approaches.

Paper Details

Date Published: 15 April 2011
PDF: 12 pages
Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 79720K (15 April 2011); doi: 10.1117/12.880180
Show Author Affiliations
Kenji Yoshimoto, GLOBALFOUNDRIES Inc. (United States)
Craig Higgins, GLOBALFOUNDRIES Inc. (United States)
College of Nanoscale Science & Engineering, Univ. of Albany (United States)
Ananthan Raghunathan, College of Nanoscale Science & Engineering, Univ. of Albany (United States)
John G. Hartley, College of Nanoscale Science & Engineering, Univ. of Albany (United States)
Dario L. Goldfarb, IBM Thomas J. Watson Research Ctr. (United States)
Hirokazu Kato, Toshiba America Electronic Components, Inc. (United States)
Karen Petrillo, IBM Corp. (United States)
Matthew E. Colburn, IBM Corp. (United States)
Jeffrey Schefske, GLOBALFOUNDRIES Inc. (United States)
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Thomas I. Wallow, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 7972:
Advances in Resist Materials and Processing Technology XXVIII
Robert D. Allen; Mark H. Somervell, Editor(s)

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