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Proceedings Paper

Study of microstructural and optical properties of a-Si:H thin films
Author(s): Stanislav Jurečka; Jarmila Müllerová
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Paper Abstract

Undoped amorphous silicon thin films pasivated by hydrogen (a-Si:H) are important for a number of industrial and research applications, especially for optoelectronics, photovoltaics, optical communications, senzorics, laser technology and so on. We experimentally studied properties of the a-Si:H thin films prepared by the plasma-enhanced chemical vapour deposition (PECVD) method. Sample microstructure properties and the effect of the microstructure on optical properties of the a-Si:H thin films deposited by PECVD on glass were analysed. The spectral refractive index, extinction coefficient, and surface morphology were analysed for the series of a-Si:H samples prepared in different technological conditions from H diluted silane plasma. Surface morphology of studied samples was described by the atomic force microscopy (AFM) method. Optical properties of a-Si:H thin films were analysed by numerical optimization of the microstructural and dispersion model of optical parameters relative to the experimental spectral reflectance. The results show that at dilution between 20 and 30 the transition between amorphous and polycrystalline phase occurs. The sample becomes a mixture of amorphous and polycrystalline phase with nano-sized grains and voids with decreasing hydrogen concentration.

Paper Details

Date Published: 14 December 2010
PDF: 6 pages
Proc. SPIE 7746, 17th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 774615 (14 December 2010); doi: 10.1117/12.880053
Show Author Affiliations
Stanislav Jurečka, Univ. of Žilina (Slovakia)
Jarmila Müllerová, Univ. of Žilina (Slovakia)

Published in SPIE Proceedings Vol. 7746:
17th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics
Jarmila Müllerová; Dagmar Senderáková; Stanislav Jurečka, Editor(s)

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