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Proceedings Paper

Advances in UV sensitive visible blind GaN-based APDs
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Paper Abstract

In this paper, we describe our current state-of-the-art process of making visible-blind APDs based on GaN. We have grown our material on both conventional sapphire and low dislocation density free-standing c- and m-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs are compared. The spectral response and Geiger-mode photon counting performance of UV APDs are studied under low photon fluxes. Single photon detection capabilities with over 30% are demonstrated. We show how with pulse height discrimination the Geiger-mode operation conditions can be optimized for enhanced SPDE versus dark counts.

Paper Details

Date Published: 24 January 2011
PDF: 10 pages
Proc. SPIE 7945, Quantum Sensing and Nanophotonic Devices VIII, 79451G (24 January 2011); doi: 10.1117/12.879942
Show Author Affiliations
Melville P. Ulmer, Northwestern Univ. (United States)
Ryan McClintock, Northwestern Univ. (United States)
Manijeh Razeghi, Northwestern Univ. (United States)


Published in SPIE Proceedings Vol. 7945:
Quantum Sensing and Nanophotonic Devices VIII
Manijeh Razeghi; Rengarajan Sudharsanan; Gail J. Brown, Editor(s)

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