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Paper Abstract

For the logic generations of the 15 nm node and beyond, the printing of pitches at 64nm and below are needed. For EUV lithography to replace ArF-based multi-exposure techniques, it is required to print these patterns in a single exposure process. The k1 factor is roughly 0.6 for 64nm pitch at an NA of 0.25, and k1 ≈ 0.52 for 56nm pitch. These k1 numbers are of the same order at which model based OPC was introduced in KrF and ArF lithography a decade or so earlier. While we have done earlier work that used model-based OPC for the 22nm node test devices using EUV,1 we used a simple threshold model without further resist model calibration. For 64 nm pitch at an NA of 0.25, the OPC becomes more important, and at 56nm pitch it becomes critical. For 15 nm node lithography, we resort to a full resist model calibration using tools that were adapted from conventional optical lithography. We use a straight shrink 22 nm test layout to assess post-OPC printability of a metal layer at pitches at 64 nm and 56 nm, and we use this information to correct test layouts.

Paper Details

Date Published: 5 April 2011
PDF: 9 pages
Proc. SPIE 7969, Extreme Ultraviolet (EUV) Lithography II, 79690U (5 April 2011); doi: 10.1117/12.879931
Show Author Affiliations
Martin Burkhardt, IBM Research (United States)
Matt Colburn, IBM Research (United States)
Yunfei Deng, GLOBALFOUNDRIES Inc. (United States)
Emily Gallagher, IBM Microelectronics (United States)
Hirokazu Kato, Toshiba America Electronic Components, Inc. (United States)
Greg McIntyre, IBM Microelectronics (United States)
Karen Petrillo, IBM Research (United States)
Sudhar Raghunathan, IBM Research (United States)
Adam C. Smith, IBM Microelectronics (United States)
Tom Wallow, GLOBALFOUNDRIES Inc. (United States)
Obert Wood, GLOBALFOUNDRIES Inc. (United States)
Yi Zou, GLOBALFOUNDRIES Inc. (United States)
Christian Zuniga, Mentor Graphics Corp. (United States)


Published in SPIE Proceedings Vol. 7969:
Extreme Ultraviolet (EUV) Lithography II
Bruno M. La Fontaine; Patrick P. Naulleau, Editor(s)

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