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Proceedings Paper

Full-chip OPC and verification with a fast mask 3D model
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Paper Abstract

Mask topography (3D) scattering has to be taken into account for a more accurate solution of optical proximity correction (OPC) to meet the advanced Lithography patterning requirements. We report full-chip OPC and verification with a fast mask 3D model. To compare to the conventional mask model with Kirchhoff approximation, we performed lithography model calibration, OPC correction, and verification on a 40nm half-pitch BEOL metal layer using both approaches. OPC accuracies of both models are evaluated by measuring the critical dimension (CD) data on the printed wafer. OPC time with the fast 3D model is comparable to Kirchhoff model for the studied lithography configurations in this paper. Process windows of post-OPC layout are compared for both approaches.

Paper Details

Date Published: 23 March 2011
PDF: 9 pages
Proc. SPIE 7973, Optical Microlithography XXIV, 79732R (23 March 2011); doi: 10.1117/12.879841
Show Author Affiliations
Hsu-Ting Huang, Cadence Design Systems, Inc. (United States)
Ali Mokhberi, Cadence Design Systems, Inc. (United States)
Huixiong Dai, Applied Materials, Inc. (United States)
Chris Ngai, Applied Materials, Inc. (United States)


Published in SPIE Proceedings Vol. 7973:
Optical Microlithography XXIV
Mircea V. Dusa, Editor(s)

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