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Proceedings Paper

Patterning of aluminum thin films by 157nm F2 laser
Author(s): K. Iwai; M. Okoshi; H. Nojiri; N. Inoue
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Paper Abstract

A 157 nm F2 laser was used for the surface and interface modifications of Al thin films on silica glass substrate for fabricating a pattern of Al thin films. The F2-laser irradiated surface swelled remarkably by inducing the strong oxidation reaction of Al thin films to form Al2O3 protective layer. High adhesion strength of 663 kgf/cm2 between Al and silica glass was also obtained for the F2-laser-irradiated sample, compared with the cases in the ArF-laser irradiated, fourth harmonic of Nd:YAG-laser irradiated and nonirradiated samples of 326, 19 and 16 kgf/cm2, respectively. Thus, the F2- laser irradiated sample showed high abrasion resistance for embossing a fine pattern of Al thin films on silica glass. Mechanism of the F2-laser-induced surface and interface modifications was discussed, comparing with the cases in the ArF laser and fourth harmonic of Nd:YAG laser.

Paper Details

Date Published: 22 February 2011
PDF: 6 pages
Proc. SPIE 7920, Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVI, 79201B (22 February 2011); doi: 10.1117/12.879788
Show Author Affiliations
K. Iwai, National Defense Academy (Japan)
M. Okoshi, National Defense Academy (Japan)
H. Nojiri, Renias Co., Ltd. (Japan)
N. Inoue, National Defense Academy (Japan)


Published in SPIE Proceedings Vol. 7920:
Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XVI
Bo Gu; Guido Hennig; Xianfan Xu; Hiroyuki Niino, Editor(s)

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